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2SK3069
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1062-1100 (Previous: ADE-208-694I) Rev.11.00 Sep 07, 2005
Features
* Low on-resistance RDS(on) = 6 m typ. * Low drive current * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D
G 1
1. Gate 2. Drain (Flange) 3. Source
2
3 S
Rev.11.00 Sep 07, 2005 page 1 of 7
2SK3069
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Ratings 60 20 75 300 75 50 214 100 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 -- -- 1.0 -- -- 50 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 6.0 8.0 80 7100 1000 280 125 25 25 60 300 520 330 1.05 90 Max -- 0.1 10 2.5 7.5 12 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 40 A, VGS = 10 V Note 4 ID = 40 A, VGS = 4 V Note 4 ID = 40 A, VDS = 10 V Note 4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 75 A VGS = 10 V, ID = 40 A, RL = 0.75
IF = 75A, VGS = 0 IF = 75A, VGS = 0 diF/ dt = 50 A/ s
Rev.11.00 Sep 07, 2005 page 2 of 7
2SK3069
Main Characteristics
Power vs. Temperature Derating
200 1000 300 150
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30 10 3 1 0.3
DC
100
50
Operation in this area is limited by RDS(on)
s( Op 1 e sh (T rati ot c = on ) 25 C )
10 0 s PW s 1 m = s 10 m
10
0
50
100
150
200
0.1 Ta = 25C 0.1 0.3 1
3
10
30
100
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100
VGS = 10 V 5V 4V
Typical Transfer Characteristics
100
Pulse Test
Drain Current ID (A)
60
Drain Current ID (A)
80
3.5 V
80
VDS = 10 V Pulse Test
60
40 3V 20 2.5 V 0 2 4 6 8 10
40 25C 75C Tc = -25C 0 1 2 3 4 5
20
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
100
Drain to Source Saturation Voltage VDS (on) (V)
2.0
Pulse Test
Static Drain to Source on State Resistance RDS (on) (m)
Pulse Test
50
1.6
1.2
20 10 5
VGS = 4 V
0.8
10 V
0.4 10 A 0 4 8
ID = 50 A 20 A 12 16 20
2 1
1
2
5
10
20
50 100 200
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.11.00 Sep 07, 2005 page 3 of 7
2SK3069
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
20 Pulse Test 16 ID = 50 A 10 A 4V 10, 20, 50 A
VGS = 10 V
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 25C 75C Tc = -25C
VDS = 10 V Pulse Test
20 A
12
8
4 0 -50
0
50
100
150
200
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 30000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
500 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
Capacitance C (pF)
10000
Ciss
3000 1000
Coss
300 100 0
Crss
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 75 A
VGS
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1000
td(off)
100
80
16
Switching Time t (ns)
500
tf tr td(on)
60 V DS 40
VDD = 50 V 25 V 10 V
200 100 50 20
12
8
20
VDD = 50 V 25 V 10 V
4 0 400
0
80
160
240
320
10 0.1 0.2 0.5 1
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
2
5 10 20
50 100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.11.00 Sep 07, 2005 page 4 of 7
2SK3069
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
100 10 V 80 5V
250
IAP = 50 A VDD = 25 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR
200
60
VGS = 0, -5 V
150
40
100
20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
50 0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu ho 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS Monitor L IAP Monitor
PW (S) Avalanche Waveform
EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP
Rg
D. U. T
VDD
VDS
ID
Vin 15 V 50 0 VDD
Rev.11.00 Sep 07, 2005 page 5 of 7
2SK3069
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vin Vout Vin 10 V 50 Vout Monitor 10% 10% 10%
Switching Time Waveforms
90%
90% td(on) tr
90% td(off) tf
Rev.11.00 Sep 07, 2005 page 6 of 7
2SK3069
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK3069-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.11.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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